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| 2SD1898 NPN Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor Description SOT-89 The 2SD1898 is designed for switching applications. REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC ICP (Single pulse Pw=20ms) PD Ratings +150 -55 ~ +150 100 80 5.0 1 2 500 V V V A A mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob at Ta = 25 : Min. 100 80 5 82 Typ. 100 25 Max. 1 1 400 390 MHZ pF Unit V V V uA uA mV IC=50uA IC=1mA IE=50uA VCB=80V VEB=4V IC=500mA, IB=20mA VCE=3V, IC=500mA VCE=10V,IC=50mA,f=100MHZ VCB=10V,IE=0, f=1MHz Test Conditions Classification Of hFE Rank hFE P 82-180 Q 120-270 R 180-390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 1 of 2 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 2 of 2 |
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